Articles written in Sadhana
Volume 44 Issue 7 July 2019 Article ID 0164
The number of antennas on a site increases due to a simultaneous deployment of multi-band and multi-mode radios to combat extremely growing data demand in the network. The correct values of physical parameters of antennas, including azimuth, height and tilt, are essential to optimize the radio frequency (RF)network automatically. It is seen that poor results in RF network optimization are mainly due to incorrect azimuth. The proposed algorithm can estimate the azimuth of an antenna in the field using passive monitoring data from the user equipment. It has been developed to identify the correct value of azimuth without doing thefield audit, which can significantly reduce the time for optimization and operational expenditure (OPEX) as well. The field trial reveals that the estimated azimuth value closely matches within ±12° range in comparison to theactual value in the field. Moreover, field results show that the same algorithm is equally applicable for urban and rural morphologies as well. It can also be automated to sanctify the physical site database with proper azimuthvalues at large level without introducing any kind of human error.
Volume 45 All articles Published: January 2020 Article ID 0031 Letters (Electrical Sciences)
The microelectronics circuits used in the aerospace applications work in an extremely radiated environment, causing a large possibility of a single event upset (SEU). Static random access memory (SRAM) is the most susceptible of these circuits as it occupies a significant area of the recent System-on-Chip (SoC) andalso frequently store important data. Therefore, retaining data integrity with regards to SEUs has become a primary requirement of SRAM bit-cell design. Use of FinFET devices in the SRAM cell can offer higher resistance against radiation compared to the CMOS counterparts. In this work, using TCAD simulations, wehave analysed effect of SEU on three different FinFET based 6T bit-cell configurations, in which number of fins in the access and pull-down transistors are different. We have analysed the effect of SEU at an angle of 90° and60°.