Photo-induced charge transfer and its kinetics were investigated in Bi₁₂SiO₂₀ in 10–300 K temperature range, using EPR of Fe³⁺ centre, underin situ illumination with copper vapour laser (CVL). The decay kinetics was found to follow double exponential behaviour. Relaxation of the photo-induced electron transfer to the preillumination condition occurred even at 10 K. Shallow traps were, therefore, associated with the electron trapping, leading to a better understanding of the fast photorefractive response of BSO.

Photo-EPR measurements carried out on Nd³⁺ -doped polyvinyl alcohol (PVA) films have shown that nearly 100% reduction occurs in the intensity of EPR of Nd³⁺ under in situ copper vapor laser (CVL) illumination (510.5 nm and 578.2 nm). The kinetics of decay and recovery were investigated. Photoacoustic (PA) spectra, observed under CVL pump condition had shown that the CVL induced changes were not due to photoinduced valence change, and that the CVL pumping creates highly favorable conditions for non-equilibrium population distribution in the excited electronic states. The complete disappearance of EPR under CVL pumping is attributed either to the possible equalization of population of |+〈 and |−〈 Zeeman components, through the decay of many excited states in the presence of magnetic field or configurational changes around Nd³⁺ shifting the resonance frequency. The former appears less probable in view of the relatively slower recovery of EPR signal.