• V Swaminathan

      Articles written in Pramana – Journal of Physics

    • Pressure and volume dependence of thelo-to phonons in InAs

      A Jayaraman V Swaminathan B Batlogg

      More Details Abstract Fulltext PDF

      The pressure dependence of thelo-to phonons in InAs has been investigated by Raman scattering using the diamond anvil cell. Indium arsenide transforms, presumably to the rock-salt structure at 70±1 kbar. The mode Grüneisen parameters for thelo-to phonons are γlo=0.99±0.03, γto=1.2±0.03 respectively. The effective charge,e*T, for InAs decreases slightly with pressure and this trend is in accordance with the behaviour of other III–V zinc blende structured semiconductors: The structural phase transition is discussed in the light of theoretical calculations for phase stability of III–V compounds, as well as recent high pressure x-ray diffraction studies.

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