V R K Murthy
Articles written in Pramana – Journal of Physics
Volume 44 Issue 1 January 1995 pp 19-32
The cavity perturbation technique is employed for the characterisation of semiconductors at microwave frequency for its conductivity. Temperature variation of microwave conductivity studies provide the information regarding the band gap, scattering parameter and impurity ionization energy. Change in the real part of the dielectric permittivity with conductivity indicates the change in the momentum relaxation time.
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