The K absorption spectra of zirconium, molybdenum and selenium in ZrSe₂ and MoSe₂ have been recorded photographically using a Cauchois type bent crystal (mica) spectrograph. The absorption edge shifts are used along with the data for NbSe₂ (Bhide and Bahl 1971J. Phys. Chem. Solids32 1001) to propose bond schemes for these compounds.

A method to study domain structure in ferroelectrics, using pyroelectric effect is described. Variation of pyroelectric signal from the surface of a triglycine sulphate crystal plate has been studied by scanning the surface of the crystal with a low wattage He-Ne laser beam. The integrated pyroelectric signal is due to two components, namely, (1) the primary component arising out of the change in spontaneous polarization with temperature and (2) the delayed component arising out of the possible polarization reversal. The component of an electric field along the ferroelectric axis due to thermal hemisphere within the crystal plate formed by the laser beam has been calculated and shown to exceed coercive field, making polarization reversal possible. The delayed pyroelectric signal is a measure of polarization reversal within the patch illuminated and its observed variation over the surface yields information of the domain structure.

The mechanism and kinetics of chemisorption of oxygen on thin evaporated films of CdS have been investigated through changes in electrical conductivity caused by chemisorbed oxygen. Electrical conductivity of CdS films, when exposed to oxygen atmosphere falls exponentially with time, with a characteristic time determined by several factors such as temperature, electric field applied to the sample, illumination, etc. Electric field applied in appropriate direction is shown to enhance oxygen chemisorption. Complete theoretical treatment for these changes has been provided and the agreement between theory and experiment is shown to be excellent.

Photoelectric properties of pure and Al doped vacuum deposited CdS films have been studied to explore the possibility of their application in photoactivated liquid crystal light valves. The effect of heat treatment in oxygen atmosphere, rate of deposition and the extent of Al doping, etc. on the resistivity, photo-response spectral characteristics, rise and decay time of photo-current, etc. have been investigated. It has been found that in contrast to pure CdS films, the properties of Al-doped films significantly depend on both the rate of deposition and the extent of Al doping. The dark resistivity in all cases was found to increase with heat treatment in oxygen. Unlike pure CdS films, Al doped films show photo-conductivity which is enhanced by heat treatment. Al doped films deposited at higher rates show better photo response even at lower light levels. At various light levels the rise and decay time of Al-doped films were found to be fairly constant and lower than that for pure CdS films. All these properties have been explained in terms of the presence of trapping levels due to doping. These trapping levels are also indicated by TSC, optical absorption and EPR studies.

An automated linear laboratory EXAFS spectrometer of the Johansson type has been indigenously developed. Only two translational motions are required to achieve the necessary Rowland circle configuration for the (fixed) X-ray source, the dispersing and focusing bent crystal and the receiving slit. With the available crystals the spectral region from 5 to 25 keV can be scanned. The linear motions of the crystal and receiving slit including the detector assembly are achieved by employing software-controlled DC motors and utilizing optical encoders for position sensing. The appropriate rotation of the crystal is achieved by the geometry of the instrument. There is a facility to place the sample alternately in the path of the X-ray beam and out of the path to record both the incident X-ray intensityI₀ and the transmitted intensityI employing the scintillation detector. An arrangement with a two-window proportional detector before the sample to measureI₀ and the scintillation detector to recordI is also developed; in this case it is not necessary to oscillate the sample. Fast electronic circuits are employed to minimize counting errors. The instrument is user-friendly and it is operated through a menu-driven IBM compatible PC. EXAFS spectra of high resolution have been recorded using the spectrometer and employing the Si(111) reflecting planes; the X-ray source being a Rigaku 12 kW rotating anode with Cu target. We describe the spectrometer and discuss its performance with a few representative spectra.