S V Ghaisas
Articles written in Pramana – Journal of Physics
Volume 14 Issue 4 April 1980 pp 289-294 Instrumentation
A modified electron bombardment type ion source suitable for use with mass spectrometer is described. Ion formation occurs throughout a relatively large volume in the ionisation box, since no magnetic field is used to collimate the ionising electrons. A sensitivity of 2 × 10−5 amp/torr is obtained for an ion extraction energy of 2 keV and 200 mass resolution. Trajectory tracing has been used to study the operation of the ion source. Capability of the ion source to analyse solid samples in microgram quantity was tested by studying evaporation of BaO from tungsten.
Volume 15 Issue 1 July 1980 pp 75-83 Solid State Physics
Resistance changes in thin films of copper, aluminium and bismuth have been studied under the bombardment of nitrogen, carbon and argon ions. Variations in resistance with implantation dose have been observed upto doses of ∼ 3 × 1017 ions/cm2 for ion energies in the range 40 to 120 keV. The results are discussed in terms of desorption of gases from the film and a composite action of sputter removal of the film and its structural changes upon ion bombardment. A simple theoretical model is discussed which can qualitatively explain the experimental observations.
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