Articles written in Pramana – Journal of Physics
Volume 23 Issue 1 July 1984 pp 17-29 Solid State Physics
The electrical resistivity of bulk Ge20Te80 has been measured as a function of pressure and temperature. At 5 GPa, an amorphous semiconductor-to-crystalline metal transition has been observed. The sample recovered from the high pressure cell, after the application of 7 GPa, has a face-centred cubic structure with a lattice constant of 6·42 A. In crystalline sample, the semiconductor-to-metal transition occurs at 7 GPa. The thermoelectric power has also been measured for glassy samples in the temperature range 300–240 K.
Volume 23 Issue 1 July 1984 pp 31-37 Solid State Physics
The pressure dependence of the electrical resistivity of bulk GeSe2 glass shows a semiconductor-to-metal transition at 7 GPa pressure. The high pressure phase is examined using the x-ray diffractometer and is found to be crystalline, with a face-centred cubic structure having
Volume 43 Issue 3 September 1994 pp 189-192
The effect of pressure on the conductivity of AgI-Ag2O-MoO3 glasses has been reexamined. A conductivity maximum is observed around 0·7 GPa. No variation of the sample temperature is noted under pressure. The results are found to agree well with the cluster-tissue model.
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