Relative cross sections, differential in energy and angle, for electrons ejected from CH₄ and C₃H₈ molecules under 16.0 keV electron impact have been measured. Electrons were analyzed by a 45° parallel plate electrostatic analyzer at emission angles varying from 60° to 135° with energies from 50 eV to 1000 eV. The angular distributions of electrons exhibit structures which are found to arise from Coulomb and non-Coulomb interactions. Furthermore, the double differential cross sections of electrons ejected from C₃H₈ molecule are found to be higher in magnitude than those from CH₄. This result supports the fact that the number of ejected electrons participating in collisions with C₃H₈ molecules is more than that in CH₄. Also, the angular distributions of C-K-shell Auger electrons emitted from the target molecules have been studied and shown to be isotropic within the experimental uncertainty

Thin films of pure and aluminum-doped zinc oxide (AZO) were deposited on glass substrates from ammonium zincate bath following a chemical dipping technique called successive ion layer adsorption and reaction (SILAR). Characterization techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-rays (EDX) were used to investigate the effect of Al doping on the microstructure of AZO films. Particle size analysis using X-ray line broadening shows marginally increasing trend with increasing Al impurity. The average particle size for pure ZnO is 22.75 nm. It increases to 24.26 nm for 1% AZO film and 25.13 nm for 2% AZO film. Incorporation of Al was confirmed from elemental analysis using EDX. SEM micrograph shows that pure ZnO particles are spherical shaped. However, AZO films show particles with off-spherical shape with compact interconnected grains. The value of band gap for pure ZnO is 3.229 eV and it increases to 3.29 eV for 1% AZO indicating a blue-shift for 1% AZO film. However, for 2% AZO film, a decrease in band gap compared to pure ZnO is observed indicating a red-shift of fundamental absorption edge. Electrical resistance shows an initial decrease with increasing Al content. With further enhancement of Al incorporation, the resistance increases.