The results of electrical resistance measurements under pressure on single crystals of WSe₂ are reported. Measurements up to 8.5 GPa are carried out using Bridgman anvil set up and beyond it using diamond anvil cell (DAC) up to a pressure of 27 GPa. There is no clear indication of any phase transition till the highest pressure is reached in these measurements.

In the present paper an attempt has been made to describe the chemical vapor transport (CVT) technique used for the growth of molybdenum disulphide (MoS₂) single crystals. Iodine (I₂) is used as transporting material for this purpose. The energy dispersive analysis by X-ray (EDAX) confirmed the stoichiometry of the as-grown crystals. The lattice parameters of these crystals were determined from the X-ray diffraction analysis. The grown crystals were examined under the optical zoom microscope for their surface microstructure study.

Transition metal trichalcogenides are well suited for extreme pressure lubrication. These materials being semiconducting and of layered structure may undergo structural and electronic transition under pressure. In this paper authors reported the details about synthesis and characterization of zirconium sulphoselenide single crystals. The chemical vapour transport technique was used for the growth of zirconium sulphoselenide single crystals. The energy dispersive analysis by X-ray (EDAX) gave the confirmation about the stoichiometry of the as-grown crystals and other structural characterizations were accomplished by X-ray diffraction (XRD) study. The variation of electrical resistance was monitored in a Bridgman opposed anvil set-up up to 8 GPa pressure to identify the occurrence of any structural transition. These crystals do not possess any structural transitions upto the pressure limit examined.