The results of electrical resistance measurements under pressure on single crystals of WSe₂ are reported. Measurements up to 8.5 GPa are carried out using Bridgman anvil set up and beyond it using diamond anvil cell (DAC) up to a pressure of 27 GPa. There is no clear indication of any phase transition till the highest pressure is reached in these measurements.

In the present paper an attempt has been made to describe the chemical vapor transport (CVT) technique used for the growth of molybdenum disulphide (MoS₂) single crystals. Iodine (I₂) is used as transporting material for this purpose. The energy dispersive analysis by X-ray (EDAX) confirmed the stoichiometry of the as-grown crystals. The lattice parameters of these crystals were determined from the X-ray diffraction analysis. The grown crystals were examined under the optical zoom microscope for their surface microstructure study.