• R People

      Articles written in Pramana – Journal of Physics

    • Γ andX bandgap hydrostatic deformation potentials for epitaxial In0.52Al0.48As on InP(001)

      R People A Jayaraman K W Wecht S K Alexander A Y Cho D L Sivco

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      The pressure dependence of the direct and indirect bandgap of epitaxial In0.52Al0.48As on InP(001) substrate has been measured using photoluminescence up to 92 kbar hydrostatic pressure. The bandgap changes from Γ toX at an applied pressure of ∼ 43 kbar. Hydrostatic deformation potentials for both the Γ andX bandgaps are deduced, after correcting for the elastic constant (bulk modulus) mismatch between the epilayer and the substrate. For the epilayer we obtain$$(\Xi _d + \tfrac{1}{3}\Xi _u - a) as - (6 \cdot 92 + 0 \cdot 3) eV$$ and+(2.81±0.15)eV for the Γ andX bandgaps respectively. From the pressure dependence of the normalized Γ-bandgap photoluminescence intensity a Γ-X lifetime ratio, (τΓX), of 4.1×10−3 is deduced.

    • Pressure-tuned resonance Raman scattering and photoluminescence studies on MBE grown bulk GaAs at theE0 gap

      A Jayaraman G A Kourouklis R People S K Sputz L Pfeiffer

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      Hydrostatic pressure has been used to tune in resonance Raman scattering (RRS) in bulk GaAs. Using a diamond anvil cell, both the photoluminescence peak (PL) and the 2 LO and LO-phonon Raman scattered intensities have been monitored, to establish RRS conditions. When theE0 gap of GaAs matchesħωS orħωL, the 2 LO and LO-phonon intensity, respectively, exhibit resonance Raman scattering maxima, at pressures determined byħωL. With 647.1 nm radiation (ħωL = 1.916 eV), a sharp and narrow resonance peak at 3.75 GPa is observed for the 2 LO-phonon. At this pressure the 2 LO-phonon goes through its maximum intensity, and falls right on top of the PL peak, revealing thatħωS(2 LO) =E0. This is the condition for “outgoing” resonance. Experiments with other excitation energies (ħωL) show, that the 2 LO resonance peak-pressure moves to higher pressure with increasingħωL, and the shift follows precisely theE0 gap. Thus, the 2 LO RRS is an excellent probe to follow theE0 gap, far beyond the Γ-X cross-over point. A brief discussion of the theoretical expression for resonance Raman cross section is given, and from this the possibility of a double resonance condition for the observed 2 LO resonance is suggested. The LO-phonon resonance occurs at a pressure whenħωLE0, but the pressure-induced transparency of the GaAs masks the true resonance profile.

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