R P Sharma
Articles written in Pramana – Journal of Physics
Volume 18 Issue 4 April 1982 pp 295-301
CV K Baba M G Betigeri V M Datar M B Kurup R P Sharma P Singh
An optical transition of 3489 A has been shown to arise from Li using beam foil spectroscopic technique. The mean life of the state emitting this radiation has been measured to be 2.23 ä 0.08 n sec.
Volume 26 Issue 3 March 1986 pp 191-203 Experimental Techniques And Instrumentation
Fabrication of lithium-drifted silicon detectors by constant temperature method
A new approach for lithium drifting in silicon is described where the silicon devices under drift are held at constant temperature and bias at normal air ambient, and the drift process is terminated at the end of an estimated time depending upon the thickness of wafers. A 4-channel lithium drifting unit with electronically controlled oven has been constructed for this purpose. Full details of the fabrication procedure are given. A sizable number of Si(Li) detectors have been fabricated using this approach. The quality of the detectors is tested with241Am alphas and conversion electrons from209Bi and137Cs sources. The detectors are regularly used for nuclear physics experiments at this Centre.
Volume 31 Issue 3 September 1988 pp 185-195 Nuclear Physics
Development of high resolution silicon surface barrier detectors
Fabrication methods for silicon surface barrier detectors and their correlated properties which result in the production of high resolution (< 20 keV) devices have been studied. The techniques for fabrication and testing of the detectors currently employed at our Centre are presented. An FWHM of 14keV for 5·486 MeV241Am α has been achieved. Our results are therefore comparable with the best in the world.
Volume 34 Issue 1 January 1990 pp 67-75
Effect of annealing on the opto-electronic properties of Cu0.9In1.0Se2.0 films
R P Sharma Pankaj Garg J C Garg
The influence of annealing on the structure and opto-electronic properties of Cu0.9In1.0Se2.0 films prepared by solution growth technique has been studied. The films annealed at 500–520°C in air, vacuum (10−4 torr), In-vapour and Se-vapour show polycrystalline chalcopyrite structure with orientation perpendicular to the (220) plane. Films annealed in Se-vapour at 500°C for 30 min have maximum grain size (560 Å), minimum optical energy gap, maximum absorption coefficient, lowest resistivity, maximum photosensitivity and thus are suitable for photovoltaic applications. Annealing in In-vapour or in vacuum changes
Volume 49 Issue 6 December 1997 pp 623-633
M Ismail R P Sharma M H Rashid
Excitation function and mean projected recoil ranges of nuclei produced in the12C-induced reactions on51V target were measured by conventional stacked foil and thick-target thick-recoil-catcher technique for bombarding energies
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