• R Damle

      Articles written in Pramana – Journal of Physics

    • The effect of composition, electron irradiation and quenching on ionic conductivity in a new solid polymer electrolyte: (PEG)$_{x}$ NH4I

      R Damle P N Kulkarni S V Bhat

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      We have prepared, characterized and investigated a new PEG-2000 based solid polymer electrolyte (PEG)$_{x}$NH4I. Ionic conductivity measurements have been made as a function of salt concentration as well as temperature in the range 265–330 K. Selected compositions of the electrolyte were exposed to a beam of 8 MeV electrons to an accumulated dose of 10 kGy to study the effect on ionic conductivity. The electrolyte samples were also quenched at liquid nitrogen temperature and conductivity measurements were made. The ionic conductivity at room temperature exhibits a characteristic double peak for the composition $x = 20$ and 70. Both electron beam irradiation and quenching at low temperature have resulted in an increase in conductivity by 1–2 orders of magnitude. The enhancement of conductivity upon irradiation and quenching is interpreted as due to an increase in amorphous region and decrease in crystallinity of the electrolyte. DSC and proton NMR measurements also support this conclusion.

    • $I–V$, $C–V$ and deep level transient spectroscopy study of 24 MeV proton-irradiated bipolar junction transistor

      K V Madhu S R Kulkarni R Damle

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      This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. $I–V$, $C–V$ and DLTS measurements are carried out to characterize the transistor before and after irradiation. The properties of deep level defects observed in the bulk of the transistor are investigated by analysing the DLTS data. Two minority carrier levels, $E_{C} – 0.27$ eV and $E_{C} – 0.58$ eV and one majority carrier level, $E_{V} + 0.18$ eV are observed in the base collector junction of the transistor. The irradiated transistor is subjected to isochronal annealing. The influence of isochronal annealing on $I–V$, $C–V$ and DLTS characteristics are monitored. Most of the deep level defects seem to anneal out above $400^{\circ}$ C. It appears that the deep level defects generated in the bulk of the transistor lead to transistor gain degradation. A comparison of proton- and electron-induced gain degradation is made to assess the vulnerability of pnp transistor as against npn transistors.

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