• Purabi Gogoi

      Articles written in Pramana – Journal of Physics

    • Transport and stability studies on high band gap a-Si:H films prepared by argon dilution

      Purabi Gogoi P N Dixit Pratima Agarwal

      More Details Abstract Fulltext PDF

      Device quality hydrogenated amorphous silicon films (a-Si:H) are deposited at a high deposition rate (4-5 Å/s) using a mixture of argon and hydrogen-diluted silane. The films exhibit good opto-electronic properties and show less degradation upon light soaking. Light-induced changes in conductivity could be annealed at much lower temperature. The presence of Ar* and atomic hydrogen in plasma replaces the weak Si-Si bonds, which are responsible for light-induced degradation by strong Si-Si bonds. This results in the improved stability of the films.

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