Articles written in Pramana – Journal of Physics
Volume 70 Issue 2 February 2008 pp 351-358 Contributed papers
Device quality hydrogenated amorphous silicon films (a-Si:H) are deposited at a high deposition rate (4-5 Å/s) using a mixture of argon and hydrogen-diluted silane. The films exhibit good opto-electronic properties and show less degradation upon light soaking. Light-induced changes in conductivity could be annealed at much lower temperature. The presence of Ar* and atomic hydrogen in plasma replaces the weak Si-Si bonds, which are responsible for light-induced degradation by strong Si-Si bonds. This results in the improved stability of the films.
Volume 96, 2022
Continuous Article Publishing mode
Click here for Editorial Note on CAP Mode