An alternative approach is suggested to determine the spot-size of a multi-mode laser beam. It has been shown by simulations that the suggested approach can give the beam quality factor and characteristic radius with less than 5% error. Unlike the power content method, the proposed method is applicable to the beams even with diameter one tenth of the CCD size. The new approach has been applied to a multi-mode diode laser output and it is shown that the ABCD matrix analysis can be used for beam propagation, with the measured parameters of the laser.

In this paper an alternative approach for measurement of στ product for ⁴F_3/2→⁴I_11/2 transition of Nd³⁺ doped YVO₄ crystal is reported. In this method a microchip laser is formed by keeping a small piece of the sample in plane-plane resonator and a diode laser (808 nm) is used for pumping. The pump power induced thermal lensing effect is used to make the cavity stable. The cavity mode area is estimated by measuring the thermal lens focal length at the threshold and the average pump area is measured by Gaussian fit to the intensity profiles of the pump beam. The value of στ product of Nd:YVO₄ crystal obtained by this method is within 10% of the reported values. The advantage of this method is that it is a simple method for direct measurement of στ product of laser crystals.