An analytical investigation is made of hot carrier effects on real and imaginary parts of Brillouin susceptibility (Re, Im (χB)) of semiconductor magnetoplasmas.
Coupled mode approach is used to obtain expressions for Re, Im (χB) Numerical calculations are made for the n-InSb crystal–CO$_2$ laser system.
Efforts are made to obtain enhanced values of Re, Im(χB) and change of their sign by an appropriate selection of external magnetic field (B$_0$) and doping
concentration (n$_0$). The hot carrier effects of intense laser radiation modify the momentum transfer collision frequency of carriers and consequently, the nonlinearity
of the medium, which in turn (i) further enhances Re, Im(χB), (ii) shifts the enhanced Re, Im (χB) towards smaller values of B$_0$ and (iii) widens the range of B$_0$at which
change of sign of Re, Im(χB)occurs. The change of sign of enhanced Re, Im(χB)of semiconductor magnetoplasmas validates the possibility of the chosen Brillouin
medium as a potential candidate material for the fabrication of stimulated Brillouin scattering-dependent widely tunable and efficient optoelectronic devices such as optical switches and frequency converters.