Photo-induced charge transfer and its kinetics were investigated in Bi12SiO20 in 10–300 K temperature range, using EPR of Fe3+ centre, underin situ illumination with copper vapour laser (CVL). The decay kinetics was found to follow double exponential behaviour. Relaxation of the photo-induced electron transfer to the preillumination condition occurred even at 10 K. Shallow traps were, therefore, associated with the electron trapping, leading to a better understanding of the fast photorefractive response of BSO.
