$\rm{Ni–Co–Cu–Mn\,Ferrite+PZT (PbZr_{0.52}Ti_{0.48}O_{3})}$ ferroelectric: composite thick filmswere prepared by the screen-printing method. The normal XRD and the low glancing angle XRD confirm the presence of both phases in the composite thick films. Back-scattered SEM shows 0-3 and 3-3 types of connectivity. The magnetic ordering of the ferrite phase was confirmed from $M–H$ hysteresis loop whereas the electric ordering of the ferroelectric phase was confirmed from $P–E$ hysteresis curve. Various measurable parameters from the loop were studied as a function of the mole percent of constituent phases. PUND (positive up negative down) analysis was done to determine the resultant polarisation contributed by the participating phases in the composites. Dielectric and magnetoelectric (ME) measurements were analysed in the light of PUND measured data.

Cobalt ferrite is one of the candidates from spinel ferrite family and can be termed as an active material in resistive random-access memory (RRAM) cell because of its excellent performance in switching devices. In thisarticle, the review on the role of cobalt ferrite as an active insulator material for metal/insulator/metal (M/I/M) configuration is discussed. The mode of metal/CoFe$_2$O$_4$/metal memory cell depends on the electrode material. The metal/CoFe$_2$O$_4$/metal memory cell exhibits either unipolar resistive switching or bipolar resistive switching characteristics. The switching mechanism of the metal/CoFe$_2$O$_4$/metal memory cell can be well understood usingconducting filament model. The review suggests that the switching cycle characteristics ca