A simple experimental technique has been described for measuring range and energy-loss of any heavy ion in any complex medium with the help of a sensitive solid state nuclear track detectors (SSNTDs). In this paper we present the results obtained from our measurements of ranges and energy-loss of 16.34 MeV/u²³⁸U in Makrofol-N using CR-39 track detector. Experimental ranges are compared with the corresponding theoretical values. The significance and scope of the present work are discussed.

Latent damage tracks of energetic⁴⁰Ar ions (18·56 MeV/u) have been recorded in Lexan polycarbonate detector. Bulk and track-etch parameters are evaluated under successive chemical etching. Our results show a linear correlation between the measured track-etch rate along the track and the corresponding total energy-loss rate and predict a threshold value of 5·0 MeV mg⁻¹ cm² for track registration. Maximum etchable track lengths of⁴⁰Ar ions as a function of energies have also been measured and compared with three different sets of theoretical ranges.

Triafol-TN plastic detector foils have been irradiated with²³⁸U ions of energy 16.34 MeV/u and the tracks produced have been observed using the chemical etching technique. The bulk etch rate and track etch rate are determined under successive chemical etching. In our case, the validity of Arrhenius’s law is confirmed by the fact that the same value ofE_a obtained for these different concentrations, within experimental errors. The results show a linear correlation between the measured track etch rate along the track and the corresponding total energy loss rate and a threshold value of ∼ 5.0 MeV/(mg/cm²) for track registration was obtained. The maximum etched track length of²³⁸U-ion in triafol-TN has been compared with the theoretically computed range.

In the present work, attempts have been made to investigate the modification in particle track etching response of polyallyl diglycol carbonate (PADC) due to impact of 2 MeV electrons. PADC samples pre-irradiated to 1, 10, 20, 40, 60, 80 and 100 Mrad doses of 2 MeV electrons were further exposed to 140 MeV²⁸ Si beam and dose-dependent track registration properties of PADC have been studied. Etch-rate values of the PADC irradiated to 100 Mrad dose electron was found to increase by nearly 4 times that of pristine PADC. The electron irradiation has promoted chain scissioning in PADC, thereby converting the polymer into an easily etchable polymer. Moreover, the etching response and the detection efficiency were found to improve by electron irradiation. Scanning electron microscopy of etched samples further revealed the surface damage in these irradiated PADCs.