Articles written in Pramana – Journal of Physics
Volume 59 Issue 1 July 2002 pp 19-31 Research Articles
We analyze the formation of fragments in O—Br reaction at different incident energies between
Volume 95 All articles Published: 30 November 2021 Article ID 0208 Research Article
Assuming the origination of stimulated Raman scattering (SRS) in Raman susceptibility, we obtain expressions for Raman gain coefficients (under steady-state and transient regimes) of semiconductor magnetoplasmas under various geometrical configurations. The threshold value of excitation intensity and most favourable value of pulse duration (above which transient Raman gain vanishes) are estimated. For numerical calculations, we consider n-InSb crystal at 77K temperature as a Raman-active medium exposed to a frequencydoubled pulsed CO$_2$ laser. The variation of Raman gain coefficients on doping concentration, magnetostatic field and its inclination, scattering angle and pump pulse duration have been explored in detail with an aim to determinesuitable values of these controllable parameters to enhance Raman gain coefficients at lower threshold intensities and to establish the suitability of semiconductor magnetoplasmas as hosts for compression of scattered pulses and fabrication of efficient Raman amplifiers and oscillators based on Raman nonlinearities.
Volume 96, 2022
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