• Habibe Bayhan

      Articles written in Pramana – Journal of Physics

    • Frequency dependence of junction capacitance of BPW34 and BPW41 p-i-n photodiodes

      Habibe Bayhan Şadan Özden

      More Details Abstract Fulltext PDF

      This article investigates the frequency dependence of small-signal capacitance of silicon BPW34 and BPW41 (Vishay) p-i-n photodiodes. We show that the capacitance-frequency characteristics of these photodiodes are well-described by the Schibli and Milnes model. The activation energy and the concentration of the dominant trap levels detected in BPW34 and BPW41 are 280{330 meV and $1.1 \times 10^{12} - 1.2 \times 10^{12}$ cm-3, respectively. According to the high-frequency $C-V$ measurements, the impurity concentrations are determined to be about $5.3 \times 10^{12}$ and $1.9 \times 10^{13}$ cm-3 in BPW41 and BPW34, respectively using the method of $\Delta V/ \Delta (C^{-2})$ vs. 𝐶.

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