HOSAM A SAAD
Articles written in Pramana – Journal of Physics
Volume 88 Issue 1 January 2017 Article ID 0006 Regular
M M EL-NAHASS AHMED ASHOUR A A ATTA HOSAM A SAAD A M HASSANIEN ATEYYAH M AL-BARADI E F M EL-ZAIDIA
Structural, optical, electrical conductivity and dielectric relaxation properties of bulk 4-amino-3-mercapto-6-(2-(2-thienyl)vinyl)-1,2,4-triazin-5(4H)-one donor (AMT) are studied. The structure of AMT in its powder form was analysed by X-ray diffraction (XRD), infrared spectroscopy (FT-IR) and atomic forcemicroscopy (AFM). AC measurements (impedance, capacitance and phase angle) are done over the temperature range 303–373 K and in the frequency range from 42 Hz to 5 MHz. Analytical approaches for the experimentalresults of the $\sigma_{AC}(\omega,T)$ and the temperature behaviour of the frequency exponent show that the correlated barrier hopping (CBH) model is a good model to explain the AC electrical conductivity of bulk AMT organic semiconductor material. Application of the dielectric modulus formulism gives a simple method for evaluating the activation energy of the dielectric relaxation. The activation energy from the DC conductivity and the relaxation time are quite similar suggesting a hopping mechanism for AMT. The optical band gap of AMT is investigated using spectrophotometric measurement of transmittance at normal incidence of light in the wavelength range 300–1100 nm.
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