• G P Das

      Articles written in Pramana – Journal of Physics

    • On the use of Fourier-transformed Compton profile for the determination of band occupancies in certain solids

      G P Das V C Sahni

      More Details Abstract Fulltext PDF

      The Pattison-Williams method of using Fourier-transformed Compton profiles for obtaining Fermi momenta in simple metals, is extended to set up a scheme for inferringd orf band occupancies in transition metals, rare earths etc. CP measurements are reported for Ni,α-Mn andβ-Mn and then the new scheme is applied to obtain 3d occupancies in these systems. Some comments on the use of this method for other systems are also made.

    • Electronic structure of epitaxial interfaces

      G P Das

      More Details Abstract Fulltext PDF

      Metal-semiconductor (Schottky barrier) and semiconductor-semiconductor (heterojunction) interfaces show rectifying barrier heights and band offsets, which are two key quantities required to optimize the performance of a device. A large number of models and empirical theories have been put forward by various workers in the field during the last 50 years. But a proper understanding of the microscopic origin of these quantities is still missing. In this article, our focus is mainly to present a unified framework for first principles investigation of the electronic structure of epitaxial interfaces, in which one of the constituents is a semiconductor. LMTO method is now a well established tool for self-consistent electronic structure calculations of solids within LDA. Such calculations, when performed on supercell geometries, are quite successful in predicting a wide range of interface specific electronic properties accurately and efficiently. We describe here the basic formalism of this LMTO-supercell approach in its various levels of sophistication and apply it to investigate the electronic structure of A- and B-type NiSi2/Si(111) interface as a prototype metal-semiconductor system, and CaF2/Si(111) interface as a prototype insulator-semiconductor system. These are a few of the most ideal lattice matched epitaxial interfaces whose atomic and electronic structures have been extensively studied using a wide range of experimental probes. We give here a glimpse of these experimental results and discuss the success as well as limitations of LDA calculations to achieve accuracies useful for the device physicists.

  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.