• G A Kourouklis

      Articles written in Pramana – Journal of Physics

    • A high pressure raman study of ThO2 to 40 GPa and pressure-induced phase transition from fluorite structure

      A Jayaraman G A Kourouklis L G van Uitert

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      The pressure dependence of the first-order Raman peak and two second-order Raman features of ThO2 crystallizing in the fluorite-type structure is investigated using a diamond anvil cell, up to 40GPa. A phase transition from the fluorite phase is observed near 30 GPa as evidenced by the appearance of seven new Raman peaks. The high pressure phases of ThO2 and CeO2 exhibit similar Raman features and from this it is believed that the two structures are the same, and have the PbCl2-type structure. The pressure dependence dω/dP of the observed phonons and their mode Grüneisen parameters are similar to the isostructural CeO2. The observed second-order Raman features are also identified from the calculated phonon dispersion curves for ThO2.

    • Pressure-tuned resonance Raman scattering and photoluminescence studies on MBE grown bulk GaAs at theE0 gap

      A Jayaraman G A Kourouklis R People S K Sputz L Pfeiffer

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      Hydrostatic pressure has been used to tune in resonance Raman scattering (RRS) in bulk GaAs. Using a diamond anvil cell, both the photoluminescence peak (PL) and the 2 LO and LO-phonon Raman scattered intensities have been monitored, to establish RRS conditions. When theE0 gap of GaAs matchesħωS orħωL, the 2 LO and LO-phonon intensity, respectively, exhibit resonance Raman scattering maxima, at pressures determined byħωL. With 647.1 nm radiation (ħωL = 1.916 eV), a sharp and narrow resonance peak at 3.75 GPa is observed for the 2 LO-phonon. At this pressure the 2 LO-phonon goes through its maximum intensity, and falls right on top of the PL peak, revealing thatħωS(2 LO) =E0. This is the condition for “outgoing” resonance. Experiments with other excitation energies (ħωL) show, that the 2 LO resonance peak-pressure moves to higher pressure with increasingħωL, and the shift follows precisely theE0 gap. Thus, the 2 LO RRS is an excellent probe to follow theE0 gap, far beyond the Γ-X cross-over point. A brief discussion of the theoretical expression for resonance Raman cross section is given, and from this the possibility of a double resonance condition for the observed 2 LO resonance is suggested. The LO-phonon resonance occurs at a pressure whenħωLE0, but the pressure-induced transparency of the GaAs masks the true resonance profile.

    • A high pressure Raman study of TeO2 to 30 GPa and pressure-induced phase changes

      A Jayaraman G A Kourouklis

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      The effect of pressure on the Raman modes in TeO2 (paratellurite) has been investigated to 30GPa, using the diamond cell and argon as pressure medium. The pressure dependence of the Raman modes indicates four pressure-induced phase transitions near 1 GPa, 4.5 GPa, 11 GPa and 22 GPa. Of these the first is the well studied second-order transition fromD44 symmetry toD24 symmetry, driven by a soft acoustic shear mode instability. The remarkable similarity in the Raman spectra of phases I to IV suggest that only subtle changes in the structure are involved in these phase transitions. The totally different Raman spectral features of phase V indicate major structural changes at the 22GPa transition. It is suggested that this high pressure-phase is similar to PbCl2-type, from high pressure crystal chemical considerations. The need for a high pressure X-ray diffraction study on TeO2 is emphasized, to unravel the structure of the various high pressure phases in the system.

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