Articles written in Pramana – Journal of Physics
Volume 86 Issue 4 April 2016 pp 723-736 Regular
In this paper, we have developed a physics-based model for surface potential, channel potential, electric field and drain current for AlGaN/GaN high electron mobility transistor with high-K gate dielectric using two-dimensional Poisson equation under full depletion approximation with the inclusion of effect of polarization charges. The accuracy of the model has been verified and is found to be in good agreement with the simulated results.
Volume 96, 2022
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