B R Chaubey
Articles written in Pramana – Journal of Physics
Volume 16 Issue 2 February 1981 pp 155-164 Solid State Physics
Photo and electroluminescence properties in Zns: (Cu, La) and Zns: (Ag, La) phosphors
L N Tripathi B R Chaubey C P Mishra
A method for preparation of ZnS: (Cu, La) and ZnS: (Ag, La) phosphors is described. Photo and electroluminescence of these phosphors have been studied. The voltage and frequency variation of EL brightness have also been reported. The results agree with the collision-excitation mechanism in the Schottky barrier. The emission of blue, green and yellow bands has been interpreted in terms of different electronic transitions. Simultaneous action of both the field and the 3650 Å radiation has been studied. An attempt has also been made to explain the quenching and enhancement.
Volume 17 Issue 5 November 1981 pp 429-442 Solid State Physics
Optical properties of electroluminescent ZnS doped with Cu+, Mn2+ and Gd3+ ions
L N Tripathi C P Misra B R Chaubey U N Pande
ZnS:Gd, ZnS: Cu, Gd and ZnS: Mn, Gd phosphors have been prepared by firing the samples in argon atmosphere. Spectral distributions in these phosphors are discussed with appropriate mechanism. ZnS:Cu, Gd and ZnS:Mn, Gd are found to be examples of multiple band phosphors. Enhancement and quenching of the emission band intensities of all these phosphors have been studied in
Volume 19 Issue 4 October 1982 pp 385-398 Solid State Physics
Luminescence in ZnS: La and ZnS: (Mn, La) phosphors
L N Tripathi C P Mishra B R Chaubey
The photo (PL) and electro (EL) luminescence in ZnS: MnLa and ZnS: La have been studied. The enhancement and quenching of emission bands have been observed on the simultaneous application of sinusoidal field and photons. The wave shape, voltage, frequency and temperature dependence of EL brightness have been reported. A study of the phosphorescence and thermoluminescence of these phosphors is also carried out and it is observed that the trap-depth changes slowly with temperature and activator concentration. An attempt has been made to calculate the trap depth by studying temperature dependence of EL brightness. The results are reported and discussed.
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