B Chanda
Articles written in Pramana – Journal of Physics
Volume 48 Issue 6 June 1997 pp 1145-1149
Thermal quenching of luminescence in erbium doped semiconductors
The nature of the temperature dependence of luminescence intensity from Er+ ions in GaInAsP, Si, InP, GaAs, AlGaAs, ZnTe, as observed by Favennec
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