In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.

Pure and Cu-doped zinc oxide (ZnO) nanoparticles were prepared using a chemical method. The dopant concentration (Cu/Zn in atomic percentage (wt%)) is varied from 0 to 3 wt%. Structural characterization of the samples performed using X-ray diffraction (XRD) confirmed that all the nanoparticles of zinc oxide are having polycrystalline nature. Morphological studies were conducted using field emission scanning electron microscopy (FESEM) to confirm the grain size and texture. Electrical measurements showed that the AC conductivity initially decreases and then rises with increasing Cu concentration. The UV–Vis studies showed absorbance peaks in the 200–800 nm region. It is found that the absorbance does not significantly change with doping. This fact is further confirmed from the band-gap calculations using the reflectance graphs. When analysed in terms of Burstein–Moss shift, an increase of band gap from 3.42 to 3.54 eV with increasing Cu concentration is observed. In the photoluminescence (PL) studies a red-shift is observed with increasing dopant concentration.