S Mohan
Articles written in Journal of Chemical Sciences
Volume 88 Issue 5 October 1979 pp 351-358 Physical and Theoretical
A force field study of diacetylene molecule by kinetic constant method
The potential constants of diacetylene molecule has been evaluated using kinetic constants. The other molecular constants such as the generalised vibrational mean amplitudes, shrinkage constants, Coriolis coupling constants and centrifugal distortion constants are also calculated using the vibrational frequencies and the results discussed.
Volume 102 Issue 5 October 1990 pp 677-679
Laser Raman spectra of 2,4- and 2,2′-dibromophenols
The laser Raman spectra of 2,4- and 2,2′-dibromophenols have been recorded in the region 200–4000cm-1 on a Cary Model 82 grating spectrophotometer with an argon laser source. The observed frequencies have been assigned to the various modes of vibrations in terms of fundamentals assuming
Volume 103 Issue 5 October 1991 pp 677-683 Physical and Theoretical
Underpotential deposition of copper on electrochemically treated polycrystalline Au surfaces
K L N Phani S Mohan R Venkatachalam
Cyclic voltammetric responses of electrochemically treated polycrystalline gold surfaces have been examined using Cu-UPD probe reactions (UPD-underpotential deposition). The treatment procedure used appears to induce preferential crystal orientation of the Au surface with a very small roughness factor and affords a simple method to obtain well-defined surfaces for electrochemical studies.
Volume 115 Issue 5-6 October 2003 pp 401-410
Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering
S Balaji S Mohan D V S Muthu A K Sood
Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain is relieved for film thickness greater than 4 nm.
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