M L Bansal
Articles written in Journal of Chemical Sciences
Volume 102 Issue 5 October 1990 pp 643-652
HgTe has inverted band structure. Various differences that arise as a consequence of this feature are discussed and it is shown that standard macroscopic formalism for Raman scattering near E1, and E1 + Δ, gaps for zincblende structure materials can be applied to HgTe also. The unusually low value of ODP d305 obtained from Raman measurements is explained in terms of the inverted band structure of HgTe.
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