The effect of adding [Ru(bpy)3]2+ complexes during photoelectrochemical etching ofn-silicon on the photocurrent generation is studied. Remarkable enhancement of photocurrent is induced due to the presence of the dye redox system. Redox stabilization of silicon via electron transfer process based on remarkable interfacial interaction between reducing species and the photoelectrode is efficiently achieved. Transient photoelectrochemical measurements during anodic dissolution ofn-silicon in the presence of the complex redox system resulted in inhibition of photocurrent oscillations which was observed at high potentials in the absence of dye redox system. Practically, all photogenerated holes reaching the silicon electrode surface will be efficiently reacted with the coordination redox system resident at the electrode surface. A mechanism of current oscillations, based on periodic buildup and decay (hole/electron recombination) of space charge within the superficial oxide layer is proposed.