ZnMn₂O₄ active layer for resistance random access memory (RRAM) was deposited on p⁺-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn₂O₄/p⁺-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 10² and long retention times of > 10⁵ s. The conduction mechanism of the Ag/ZnMn₂O₄/p⁺-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm’s law, trap-filled-limited and Child’s law conduction procedure at room temperature.