• Ying Li

      Articles written in Bulletin of Materials Science

    • Helical 𝐻-type aggregation of trimeric 𝑝-phenylene vinylene with chiral ester groups

      Haiquan Zhang Ying Li Peng Wang

      More Details Abstract Fulltext PDF

      Self-assembly properties of the trimeric 𝑝-phenylene vinylene derivative containing symmetrical endgroups of 𝑅-(+)-2-methylbutyric acid ester (ChTPV) in H2O/THF mixed solvents were studied by absorption, photoluminescence and circular dichroism (CD) spectra. The results indicate that ChTPV exhibits helical 𝐻-type nano-aggregates in 80% H2O/THFmixed solvents, and the negative exciton coupling suggests that the chromophoric dipoles are oriented in a counter-clockwise direction.

    • Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films

      Ying Li Gaoyang Zhao Jian Su Erfeng Shen Yang Ren

      More Details Abstract Fulltext PDF

      We have fabricated ZrO2 thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible 𝐼-𝑉 curves can be obtained for the device Cu/ZrO2/ATO which is measured at room temperature (300 K). During the RESET operation, 𝑅L and 𝑅H values can be controlled by the RESET voltage. Moreover, the Cu/ZrO2/ATO device which the ZrO2 thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of 𝑅off/𝑅on reduced when the measured temperature decreased. When the 𝐼-𝑉 measurement temperature decreases, 𝑅on decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO2 films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated.

    • Study of influence on micro-fabricated resistive switching organic ZrO2 array by C-AFM measurement

      Ying Li Gaoyang Zhao Zhibo Kou Long Jin Yajing Wang

      More Details Abstract Fulltext PDF

      In this paper, a comparison of the interfacial electronic properties between Pt/Ir conductive atomic force microscopy (C-AFM) tip and ZrO2 organic array was carried out. A uniformed ZrO2 array was fabricated with a mean diameter of around 1 𝜇m using laser interference lithography. A C-AFM measurement set-up was built up. The 𝐼-𝑉 curve was directly measured of the organic ZrO2 array which shows a resistive switching characteristic by C-AFM measurement. The set voltage is 18.0 V and the reset voltage is −5.0 V. After the Pt layer was coated on the ZrO2 array, the set voltage decreases to 0.8 V and the reset voltage decreases to −2.2 V. This result shows that Pt layer can prevent the potential drop effectively. The electron barrier height between Pt/Ir C-AFM tip and organic ZrO2 array was enhanced by sputtering Pt layer on the ZrO2 organic array.

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.