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Volume 46 All articles Published: 27 March 2023 Article ID 0060
Role of temperature and Ar flow on the uniformity of epitaxial graphene grown on SiC
ZHENZHEN ZHANG DONGXUN YANG GANG DONG RUI LI YI ZHANG RAMIRO MORO YANQING MA LEI MA
Finite element methods based numerical simulations and experiments are conducted to systematically investigate the influence of temperature distribution and working gas flow to the growth of epitaxial graphene on SiC. It demonstrates the key role of temperature uniformity on the sample, which determines the coverage rate and quality of the grown graphene, as well as Ar flow for regulating the silicon partial vapour pressure. An optimized crucible was designed accordingly, which is successfully applied to prepare high coverage epitaxial graphene on the (0001) facet of SiC with great uniformity. Those insights might benefit the large-area high-quality epi-graphene growth for future industrial applications.
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Bulletin of Materials Science
Volume 46, 2023
All articles
Continuous Article Publishing mode
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Bulletin of Materials Science | News
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020 -
Editorial Note on Continuous Article Publication
Posted on July 25, 2019Click here for Editorial Note on CAP Mode
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