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Xiao-Wen Zhang
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Volume 38 Issue 1 February 2015 pp 105-109
Hua Wang Shu-Ming Gao Ji-Wen Xu Chang-Lai Yuan Xiao-Wen Zhang
Single-phase MnZnO3 films were prepared on glass substrates coated with the use of indium tin oxide (ITO) as transparent bottom electrode
via the sol–gel method. The effects of annealing temperature on structure, resistance switching behaviour and endurance characteristics of the ZnMnO3 films were investigated. The stable resistive switching behaviour with high resistance ratio in Ag/ZnMnO3/ITO unsymmetrical structure was observed. No second phase is detected, and the crystallinity of the MnZnO3 films is improved with the increase in annealing temperature from 350 to 400°C. The MnZnO3 films annealed at 350–450°C with an Ag/MnZnO3/ITO structure exhibit bipolar resistive switching behaviour. Ohmic and space-charge-limited conductions are the dominant mechanisms at low and high resistance states, respectively. $V{}_{\text{ON}},\ \text{V_{OFF}}$ and $R_{\text{HRS}}/R_{\text{LRS}}$ of theMnZnO3 films increase with the increase in annealing temperature. Improved endurance characteristics are observed in the samples annealed at 350 and 400°C. The endurance of the MnZnO3 films degrades when annealed at >450°C.
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Bulletin of Materials Science
Volume 46, 2023
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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