BaCe_0.8−𝑥A_𝑥Gd_0.2O_3−𝛿 (A = In, Zr, Ta; 𝑥 = 0, 0.1) ceramics were synthesized by solid-state reaction method. Microstructure and electrical properties of BaCe_0.8−𝑥A_𝑥Gd_0.2O_3−𝛿 ceramics were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and complex impedance analysis at intermediate temperatures of 573–1073 K in different atmospheres. BaCe_0.8Gd_0.2O_3−𝛿, BaCe_0.7In_0.1Gd_0.2O_3−𝛿 and BaCe_0.7Zr_0.1Gd_0.2O_3−𝛿 ceramics exhibit a single cubic perovskite structure. BaCe_0.7In_0.1Gd_0.2O_3−𝛿 ceramic has the highest conductivity of 4.6 × 10^-2 S.cm^-1 in air at 1073 K. BaCe_0.7In_0.1Gd_0.2O_3−𝛿 and BaCe_0.7Zr_0.1Gd_0.2O_3−𝛿 ceramics exhibit an excellent chemical stability against boiling water. Indium is a suitable doping element to promote the sintering densification and to enhance both electrical conductivity and chemical stability of Gd-doped BaCeO₃ at operating temperatures.