Articles written in Bulletin of Materials Science

    • Photodetector fabrication based on heterojunction of CuO/SnO$_2$/Si nanostructures


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      Photodetector (PD) was successfully fabricated based on p-CuO NPs/n-SnO$_2$ NWs/Si heterojunction. SnO$_2$ nanowires (SnO$_2$ NWs) on a silicon substrate were first synthesized via chemical vapour deposition (CVD) followed bythe deposition of copper oxide nanoparticles (CuO NPs) using the drop-casting technique. The films were characterized by X-ray diffraction and scanning electron microscope equipped with an energy dispersive X-ray spectrometer. Subsequently,two steps of PD fabrications were conducted for SnO$_2$ NWs/Si and CuO/SnO$_2$/Si films. The dark I–V characteristics of SnO$_2$/Si and CuO/SnO$_2$/Si heterojunction exhibit a rectification property. The PD response of SnO$_2$/Si has asharp cutoff at a wavelength around 390 nm, while the CuO/SnO$_2$/Si nanostructures displayed response at wavelengths in the red UV region (${\sim}$400 nm). The responsivity and quantum efficiency of SnO$_2$/Si and CuO/SnO$_2$/Si heterojunction are about 0.057–0.33 A/W and 17–94%, respectively. The results of p-n heterojunctions based on CuO NPs/SnO$_2$ NWs/Sirevealed an efficiency enhancement of the visible-blind SnO$_2$ photodiodes representing a feasible route for building UV optoelectronic devices based on cost-effective materials.

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