Vimal K Jain
Articles written in Bulletin of Materials Science
Volume 28 Issue 4 July 2005 pp 313-316
Metal–organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD) has emerged recently as the method of choice for large scale preparation of a variety of low dimension inorganic materials; particularly compound semiconductors, used in modern electronic and opto-electronic devices. The success of this process depends on the availability of suitable molecular precursors of desired purity. Group V hydrides (e.g. NH3, PH3, AsH3, SbH3) have been employed conventionally for deposition of III–V semiconductor materials. Inherent weakness of this hydride source, particularly heavier ones (for instance very low utilization (> 0.1%) of AsH3 in GaAs synthesis; ∼ 4 h half life of SbH3 at room temperature) has been a driving force to develop new molecular precursors with desirable properties. This talk will briefly review synthesis and purification of several precursors of groups III (Ga, In), IV, V (As, Sb) and VI (Se, Te).
Volume 30 Issue 2 April 2007 pp 173-178 Nanomaterials
The reaction of KSeCOAr with InCl3 and [MCl(PR3)2] in benzene afforded bimetallic complexes, [(R3P)2MIn(SeCOAr)4] (PR3 = PEt3 or PPh3; M = Cu or Ag; Ar = –C6H5 (phenyl) or 4-MeC6H4 (tolyl)). The triethylphosphine complexes decomposed rapidly when M = Ag while slowly when M = Cu. All these complexes were characterized by elemental analysis, IR, UV-VIS, NMR (1H, 31P) spectral data. Pyrolysis in a furnace at 300°C gave tetragonal MInSe2 (M = Cu, Ag) structure. Solvothermal decomposition of [(PPh3)2CuIn(SeCOAr)4] in boiling ethylene glycol gave nanorods of CuInSe2 which were characterized by XRD, EDAX, SEM and TEM.
Volume 32 Issue 1 February 2009 pp 15-18 Thin Films and Nanomatter
Thermolysis of [Pt2 (𝜇-OR)2 (C8H12OMe)2] (R = Me or Ac) in hexadecylamine (HDA) at 210°C under argon atmosphere gave platinum nanoparticles which were characterized by XRD, EDAX and TEM analysis. Both spherical (∼ 10 nm) and rod-like (∼ 19 nm length with aspect ratio of 2.3) face centred cubic (
Volume 35 Issue 3 June 2012 pp 365-368
Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (𝐼–𝑉) characterization.
Volume 42 | Issue 6
Click here for Editorial Note on CAP Mode