Articles written in Bulletin of Materials Science
Volume 25 Issue 7 December 2002 pp 589-592 Semiconductors
The effect of step-annealing necessitated by the difficulties being faced in the long duration annealing treatments to be given to CZ–silicon has been studied. One pre-anneal of 10 h followed by annealing of 10 h causes a decrease in the absorption coefficient for carbon (𝛼c). Oxygen and carbon both accelerate thermal donor (TD) formation process but oxygen plays a dominating role. Three anneals of 10 h each followed by one anneal of 10 h support the view that carbon suppresses the donor formation. The absorption coefficient for carbon decreases after a few number of step-anneals resulting in the transformation of TD to new donor (ND) as brought about by annealing at temperature, > 500°C. It is quite logical to conclude that step-annealing may bring about the same results as obtained on continuous annealing for a longer duration.
The results have been fully supported by proper interpretation in the light of existing theories.
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