• V K GUPTA

      Articles written in Bulletin of Materials Science

    • Effect of amino-functionalization of MWCNTs on the mechanical and thermal properties of MWCNTs/epoxy composites

      ARISHA KASHYAP NAVJOT PAL SINGH SHALINI ARORA VASUNDHARA SINGH V K GUPTA

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      The study investigates the tensile, flexural and thermal properties of epoxy resin matrix reinforced with pristine as well as amino-functionalized multi-walled carbon nanotubes (MWCNTs, 0, 0.25 and 0.50 wt%). The combination ofultrasonication and magnetic stirring has been used for the fabrication of MWCNTs/epoxy composite samples. The epoxy composite reinforced with 0.50 wt% amino-functionalized MWCNTs exhibits superior mechanical and thermal properties. The tensile and flexural strengths of this composite are noticed to be higher by about 13.5 and 17%, respectively, as compared with the neat epoxy specimen. The improvement in properties offered by amino-functionalized MWCNTs/epoxy composites is attributed to uniform distribution of MWCNTs in epoxy matrix as well as better interfacial adhesion between MWCNTsreinforcement and epoxy matrix,when compared with those noticed for epoxy composite reinforced with pristine MWCNTs.

    • Tuning of structural, morphological, optical and electrical properties of SnO$_2$ by indium inclusion

      GEETA BHATIA AMAN DEEP ACHARYA M M PATIDAR V K GUPTA S B SHRIVASTAVA V GANESAN

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      A complete range of indium-doped (In:SnO$_2$) thin films prepared by spray-pyrolysis technique have been studied and characterized by different techniques to get information about structure, surface and electrical properties. The influence of indium filler concentration (i.e., 0–15 wt%) on the properties of SnO$_2$ has been explored. Structural study reveals that the inclusion of indium after a certain optimum value leads structural distortion which causes the films’ expansion along c-axis direction. The extract of electrical study helps to understand that what should be the optimum value to switch from n- to p-type, which is further confirmed by Hall measurement. A deep analysis of electrical data confirms that the solid solution of indium into SnO$_2$ should not be completely excluded and its range should not be >12 wt% as we got saturation in the electrical behaviour after it. Variable range hopping mechanism has been found to be best fitted for low temperature range and comes out with valuable information that increase in density of states near Fermi level are responsible for decrease in resistivity in case of higher doping and also confirms that 6 wt% is the optimum value to switch from n- to p-type conductivity.

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