We report the first operation of light emittingp-n junction diode in porous silicon fabricated by diffusion.

Undoped and aluminium (Al)-doped zinc oxide (ZnO) nanorods have been synthesized by electrochemical route. The synthesized materials have been characterized by X-ray diffraction, UV–visible spectrometer and scanning electron microscope. The Al-doped ZnO nanorods have been coated with polyvinyl alcohol. Current–voltage characteristics have been investigated in dark and under UV-light illumination. Aluminium doping in ZnO increase its electrical conductivity and further polyvinyl alcohol coating on Al-doped ZnO increase UV sensitivity of the material. Response and recovery time of Al-doped ZnO and PVA-coated Al-doped ZnO nanorods have been recorded. PVA-coated Al-doped ZnO nanorods shows very fast response and recovery time of 10 s in comparison to uncoated ZnO (20 min) nanorods.