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Volume 45 All articles Published: 20 February 2022 Article ID 0039
P P MAITI AJIT DASH S GUHATHAKURATA S DAS ATANU BAG T P DASH G AHMAD C K MAITI S MALLIK
Thin HfTiO$_x$ high-
k gate dielectric (Ti ${\sim}$26.6%) has been sputter-deposited on strained Si$_{0.81}$Ge$_{0.19}$ heterolayers. The energy band discontinuities and interface properties were studied using X-ray photoelectron spectroscopy. The conduction band offset, and valance band offset between HfTiO$_x$ and Si$_{0.81}$Ge$_{0.19}$ were found to be 1.34 and 2.52 eV, respectively. Further, temperature-dependent (300–500 K) current density–voltage measurements (J–V ) were utilized to explore the underlying leakage current conduction mechanism. The conductive dislocation and emission barrier heights at the hetero-interface have also been extracted from temperature-dependentJ–V measurement. The barrier height of 1.22 to 2.02 eV for Schottky emission and 0.76 to 1.26 eV for Poole–Frenkel emission were estimated at the heterointerface. To better understand the conduction mechanism between the hetero-interface and temperature-dependentJ–V , a calibrated TCAD simulation was carried out.
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Bulletin of Materials Science
Volume 46, 2023
All articles
Continuous Article Publishing mode
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Bulletin of Materials Science | News
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020 -
Editorial Note on Continuous Article Publication
Posted on July 25, 2019Click here for Editorial Note on CAP Mode
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