• T D DAS

      Articles written in Bulletin of Materials Science

    • Effect of strain on GaAs$_{1−x−y}$N$_x$Bi$_y$/GaAs to extract the electronic band structure and optical gain by using 16-band $kp$ Hamiltonian

      ARVIND SHARMA T D DAS

      More Details Abstract Fulltext PDF

      GaAs$_{1−x−y}$N$_{x}$Bi$_y$ is a suitable candidate for 1.06 $\mu$m solid state lasers and high-efficiency solar cells. Mathematical models such as 16-band kp model is used to study the band structure, strain generated effect, band offset and variation of their parameters with Bi and N concentrations. Lattice constants of alloy GaAs$_{1−x−y}$N$_{x}$Bi$_y$ with $x/y = 0.58$ can match those of GaAs with the incorporation of Bi and N into GaAsNBi. Arsenic atom substitution due to the incorporation of N and Bi impurity atoms causes a significant band gap reduction of $\sim$200 meV for GaAs$_{0.937}$N$_{0.023}$Bi${{0.04}$ alloys under lattice-matched conditions and in addition, by tuning the concentrations of N and Bi, the electrical and optical properties of GaAsNBi can be controlled. Optical gain of GaAs$_{1−x−y}$N$_x$Bi$_y$ quantum well (QW) and GaAs as a barrier are calculated in generalized mode and observed the effect of the energy level of GaAs barrier on the GaAsNBi QW.

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.