• T P Sharma

      Articles written in Bulletin of Materials Science

    • Band gap determination of Ni–Zn ferrites

      G P Joshi N S Saxena R Mangal A Mishra T P Sharma

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      Nanocomposites of Ni–Zn with copolymer matrix of aniline and formaldehyde in presence of varying concentrations of zinc ions have been studied at room temperature and normal pressure. The energy band gap of these materials are determined by reflection spectra in the wavelength range 400–850 nm by spectrophotometer at room temperature. From the analysis of reflection spectra, nanocomposites of copolymer of aniline and formaldehyde with Ni$_{1–x}$Zn$_x$Fe2O4 (𝑥 = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) have been found to have direct band gaps ranging from 1.50–1.66 eV.

    • Structural and electrical measurements of CdZnSe composite

      V Kishore Vibhav K Saraswat N S Saxena T P Sharma

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      The 𝐼–𝑉 characterization and the electrical resistivity of selenium rich Se85Cd15–𝑥Zn𝑥 (𝑥 = 0, 3, 7, 11 and 15) system at room temperature have been studied. Samples were obtained using melt cooling technique. So prepared samples were then characterized in terms of their crystal structure and lattice parameter using X-ray diffraction method. The materials were found to be polycrystalline in nature, having zinc blend structure over the whole range of zinc concentration. The measurements of 𝐼–𝑉 characteristics have been carried out at different temperatures from room to 140°C. The electrical resistivity of the samples with composition at room temperature has been found to vary between maximum 2.7 × 108𝛺 m and minimum 7.3 × 105𝛺 m and shows a maximum at 3 at. wt.% of Zn. The carrier activation energy of the samples with composition has also been determined and found to vary from 0.026 eV to 0.111 eV.

    • Optical properties of CdS sintered film

      D Patidar R Sharma N Jain T P Sharma N S Saxena

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      Chemical method has been used to prepare cadmium sulphide by using cadmium, hydrochloric acid and H2S. The reflection spectra of covered and uncovered sintered films of CdS have been recorded by ‘Hitachi spectrophotometer’ over the wavelength range 300–700 nm. The energy band gaps of these films have been calculated from reflection spectra. It is found that the energy band gap of both films is same as 2.41 eV. It is indicated that energy band gap of these films does not change. This value of band gap is in good agreement with the value reported by other workers. The measurement of photocurrent has also been carried out using Keithley High Resistance meter/ Electrometer. This film shows the high photosensitivity and high photocurrent decay. Thus so obtained films are suitable for fabrication of photo detectors and solar cells.

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