• Sukanya Mukhopadhyay

      Articles written in Bulletin of Materials Science

    • New galvanic cell designs for minimizing electrode polarization

      K T Jacob Sukanya Mukhopadhyay

      More Details Abstract Fulltext PDF

      New galvanic cell designs, incorporating one or two buffer electrodes, are developed to minimize the electrode polarization caused by electrochemical permeability of the electrolyte at high temperature. When a nonpolarizable reference electrode is employed, a cell with three-electrode compartments can be used to measure the chemical potential of oxygen in two-phase fields of ternary systems, associated with one degree of freedom at constant temperature. A buffer electrode is placed between the reference and measuring electrodes. The buffer electrode, maintained at approximately the same oxygen chemical potential as the measuring electrode, absorbs the semipermeability flux of oxygen between reference and measuring electrodes.

      When the reference electrode is polarizable, two buffer electrodes are required between the reference and measuring electrodes. The reference and reference-buffer electrodes have the same chemical potential of the active species. Similarly the measuring electrode and its buffer are of approximately the same chemical potential. A significant chemical potential difference exists only between the two buffers, which may become polarized due to coupled transport of ions and electronic defects through the electrolyte. Since the reference and measuring electrodes are insulated, the emf of the solid state cell is unaffected. The use of the buffer electrode designs permit more accurate thermodynamic measurements on metal and ceramic systems at high temperature.

    • Thermodynamic investigation of the MOCVD of copper films from bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II)

      Sukanya Mukhopadhyay K Shalini Anjana Devi S A Shivashankar

      More Details Abstract Fulltext PDF

      Equilibrium concentrations of various condensed and gaseous phases have been thermodynamically calculated, using the free energy minimization criterion, for the metalorganic chemical vapour deposition (MOCVD) of copper films using bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II) as the precursor material. From among the many chemical species that may possibly result from the CVD process, only those expected on the basis of mass spectrometric analysis and chemical reasoning to be present at equilibrium, under different CVD conditions, are used in the thermodynamic calculations. The study predicts the deposition of pure, carbon-free copper in the inert atmosphere of argon as well as in the reactive hydrogen atmosphere, over a wide range of substrate temperatures and total reactor pressures. Thin films of copper, grown on SiO2/Si(100) substrates from this metalorganic precursor by low pressure CVD have been characterized by XRD and AES. The experimentally determined composition of CVD-grown copper films is in reasonable agreement with that predicted by thermodynamic analysis.

  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.