Articles written in Bulletin of Materials Science
Volume 8 Issue 3 June 1986 pp 285-289
Heterojunctions of hydrogenated a-Si films prepared by r.f. sputtering with spraypyrolyzed CuInS2 films have been studied. Capacitance-voltage measurements establish the formation of abrupt heterojunction. The barrier height varies from 0·26 to 0·55 V as the resistivity of CuInS2 film decrease from 1·5 × 103 to 65 Θm. These junctions exhibit photovoltaic behaviour with
Volume 19 Issue 3 June 1996 pp 455-466
In this paper we report on the growth of polycrystalline diamond films on Mo, W, and Ni substrates using oxy-acetylene combustion flame technique. Effect of substrate temperature on the growth of diamond films has been studied in the temperature range 600–1100°C. The deposits and their surface morphology has been characterized by X-ray diffraction and scanning electron microscopy (SEM). A short duration pretreatment of Mo substrates by outer zone of the oxy-acetylene flame at lower substrate temperatures, results in the improvement of quality and adherence of the films. Growth of diamond as well as other intermediate compounds depending on the nature of substrates and interface layers is discussed.
Volume 42 | Issue 6
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