• S GUHATHAKURATA

Articles written in Bulletin of Materials Science

• Experimental and simulation study of charge transport mechanism in HfTiO$_x$ high-k gate dielectric on SiGe heterolayers

Thin HfTiO$_x$ high-k gate dielectric (Ti ${\sim}$26.6%) has been sputter-deposited on strained Si$_{0.81}$Ge$_{0.19}$ heterolayers. The energy band discontinuities and interface properties were studied using X-ray photoelectron spectroscopy. The conduction band offset, and valance band offset between HfTiO$_x$ and Si$_{0.81}$Ge$_{0.19}$ were found to be 1.34 and 2.52 eV, respectively. Further, temperature-dependent (300–500 K) current density–voltage measurements (J–V) were utilized to explore the underlying leakage current conduction mechanism. The conductive dislocation and emission barrier heights at the hetero-interface have also been extracted from temperature-dependent J–V measurement. The barrier height of 1.22 to 2.02 eV for Schottky emission and 0.76 to 1.26 eV for Poole–Frenkel emission were estimated at the heterointerface. To better understand the conduction mechanism between the hetero-interface and temperature-dependent J–V, a calibrated TCAD simulation was carried out.

• # Bulletin of Materials Science

Volume 46, 2023
All articles
Continuous Article Publishing mode

• # Dr Shanti Swarup Bhatnagar for Science and Technology

Posted on October 12, 2020

Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020