• S Chandrasekhar

      Articles written in Bulletin of Materials Science

    • Transistors made in laser recrystallized polysilicon on insulator films

      S Chandrasekhar P R Apte S K Roy

      More Details Abstract Fulltext PDF

      lpcvd polycrystalline silicon films were deposited on thermally oxidized silicon as well as onlpcvd silicon nitride deposited on silicon. Acw argon ion laser was used to recrystallize the polysilicon film into large grains (grain size from 5µm to 40µm). Boron was then implanted and standard N-channel silicon gate process and N-channel metal gate process were carried out to realisemosfets on this material. Channel mobilities upto 450 cm2/V-sec for electrons have been measured. This thin filmmosfet has a four-terminal structure with a top and a bottom gate and the influence of one gate on the drain current due to the other gate has been investigated. Comparison of theIDv-VD curves of the devices with physical models was found in good agreement.

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    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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