S C Agarwal
Articles written in Bulletin of Materials Science
Volume 2 Issue 5 December 1980 pp 353-356
We propose a model of the thin films of a-Ge and a-Si with microvoids as frustrated spin glasses. Within this model the various qualitative aspects of the experimental results can be reasonably explained.
Volume 3 Issue 3 November 1981 pp 347-357
A dc glow discharge apparatus for preparing amorphous silicon films from silane gas is described. The films are characterized by electron microscopy, infrared spectroscopy, electrical conductivity and photoconductivity. The deposition parameters which give good photoconducting films are established. The Staebler-Wronski effect is studied and is found to be smaller in vacuum than in air. A photovoltage is observed in structures with gold as the Schottkybarrier metal. The conversion efficiency of the device is about 1%. The results are compared with those in the literature, and the improvements which might result in a better conversion efficiency are pointed out.
Volume 14 Issue 5 October 1991 pp 1257-1278
Synthesis and some interesting properties of amorphous silicon-based superlattices are reported. Both quantum-well type and doping modulated structures are studied. Quantum confinement, phonon folding and persistent photoconductivity are some of the fascinating effects which are described and their current interpretations discussed.
Volume 18 Issue 6 October 1995 pp 669-678
The effect of light soaking and thermal quenching on the electronic structure of hydrogenated amorphous silicon (
Volume 19 Issue 1 February 1996 pp 39-50
The hydrogen in hydrogenated amorphous silicon (a-Si: H) makes it behave like a hydrogen glass. Above a temperature
Volume 19 Issue 3 June 1996 pp 455-466
In this paper we report on the growth of polycrystalline diamond films on Mo, W, and Ni substrates using oxy-acetylene combustion flame technique. Effect of substrate temperature on the growth of diamond films has been studied in the temperature range 600–1100°C. The deposits and their surface morphology has been characterized by X-ray diffraction and scanning electron microscopy (SEM). A short duration pretreatment of Mo substrates by outer zone of the oxy-acetylene flame at lower substrate temperatures, results in the improvement of quality and adherence of the films. Growth of diamond as well as other intermediate compounds depending on the nature of substrates and interface layers is discussed.
Volume 20 Issue 4 July 1997 pp 379-384
The electronic structure of hydrogenated amorphous silicon (a-Si:H) is in a state of metastable equilibrium and can change upon application of external stimuli. We study the effect of thermal quenching and light soaking in lithium-doped a-Si:H, on its conductivity and thermopower. We present evidence showing that the metastable state obtained after fast quenching is different than that obtained after light exposure. Experiments on chalcogenides show that they are not affected by thermal quenching although they change upon light soaking. This is in contrast with lithium doped a-Si:H in which both effects are observed. Our experiments suggest that hydrogen present in a-Si:H plays an important role by controlling heterogeneities and potential fluctuations in a-Si:H. Light soaking appears to enhance these potential flucutations, whereas fast cooling seems to have little effect on them.
Volume 42 | Issue 6
Click here for Editorial Note on CAP Mode