• S C Agarwal

      Articles written in Bulletin of Materials Science

    • Theory of susceptibility of a-Ge and a-Si

      A Mookerjee S C Agarwal

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      We propose a model of the thin films of a-Ge and a-Si with microvoids as frustrated spin glasses. Within this model the various qualitative aspects of the experimental results can be reasonably explained.

    • Characterization of a-Si:H thin films prepared by dc glow discharge of silane

      D S Misra P N Dixit S C Agarwal

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      A dc glow discharge apparatus for preparing amorphous silicon films from silane gas is described. The films are characterized by electron microscopy, infrared spectroscopy, electrical conductivity and photoconductivity. The deposition parameters which give good photoconducting films are established. The Staebler-Wronski effect is studied and is found to be smaller in vacuum than in air. A photovoltage is observed in structures with gold as the Schottkybarrier metal. The conversion efficiency of the device is about 1%. The results are compared with those in the literature, and the improvements which might result in a better conversion efficiency are pointed out.

    • Amorphous silicon-based superlattices

      S C Agarwal

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      Synthesis and some interesting properties of amorphous silicon-based superlattices are reported. Both quantum-well type and doping modulated structures are studied. Quantum confinement, phonon folding and persistent photoconductivity are some of the fascinating effects which are described and their current interpretations discussed.

    • Electronic structure of amorphous semiconductors

      S C Agarwal

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      The effect of light soaking and thermal quenching on the electronic structure of hydrogenated amorphous silicon (a-Si:H) and chalcogenide glasses was studied. It was found that lithium dopeda-Si:H shows both light and thermal induced changes in electronic transport properties. In contrast, chalcogenides do not show any effect of thermal quenching, although they exhibit changes upon light soaking. By analysing the conductivity and thermopower data we have concluded that the light soaking increases the potential fluctuations present in lithium dopeda-Si:H, whereas quenching does not change them. A model qualitatively explaining these effects is presented.

    • Amorphous silicon as hydrogen glass

      S C Agarwal

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      The hydrogen in hydrogenated amorphous silicon (a-Si: H) makes it behave like a hydrogen glass. Above a temperatureTE, which is analogous to the glass transition temperature, the hydrogen is able to move more freely than belowTE. This motion of hydrogen is believed to be responsible for the observed thermal and light induced metastabilities in a Si: H. However, the changes in the microstructure of the bonded hydrogen upon thermal quenching are found to influence the electronic properties of a-Si: H, in a manner, which is different from light soaking. Our studies suggest that the light soaking changes the potential fluctuations in lithium doped a-Si: H, whereas the thermal quenching does not.

    • Deposition of diamond films on metal substrates

      Manju Malhotra S C Agarwal Satyendra Kumar

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      In this paper we report on the growth of polycrystalline diamond films on Mo, W, and Ni substrates using oxy-acetylene combustion flame technique. Effect of substrate temperature on the growth of diamond films has been studied in the temperature range 600–1100°C. The deposits and their surface morphology has been characterized by X-ray diffraction and scanning electron microscopy (SEM). A short duration pretreatment of Mo substrates by outer zone of the oxy-acetylene flame at lower substrate temperatures, results in the improvement of quality and adherence of the films. Growth of diamond as well as other intermediate compounds depending on the nature of substrates and interface layers is discussed.

    • Metastable defects in hydrogenated amorphous silicon

      S C Agarwal

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      The electronic structure of hydrogenated amorphous silicon (a-Si:H) is in a state of metastable equilibrium and can change upon application of external stimuli. We study the effect of thermal quenching and light soaking in lithium-doped a-Si:H, on its conductivity and thermopower. We present evidence showing that the metastable state obtained after fast quenching is different than that obtained after light exposure. Experiments on chalcogenides show that they are not affected by thermal quenching although they change upon light soaking. This is in contrast with lithium doped a-Si:H in which both effects are observed. Our experiments suggest that hydrogen present in a-Si:H plays an important role by controlling heterogeneities and potential fluctuations in a-Si:H. Light soaking appears to enhance these potential flucutations, whereas fast cooling seems to have little effect on them.

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